As the global economy mends, the 2021 growth of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors will have significant change from previous year. According to our (LP Information) latest study, the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size is USD million in 2022 from USD 994.3 million in 2021, with a change of % between 2021 and 2022. The global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size will reach USD 8927.1 million in 2028, growing at a CAGR of 36.8% over the analysis period.
The United States Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market is expected at value of US$ million in 2021 and grow at approximately % CAGR during review period. China constitutes a % market for the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market, reaching US$ million by the year 2028. As for the Europe Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors landscape, Germany is projected to reach US$ million by 2028 trailing a CAGR of % over the forecast period. In APAC, the growth rates of other notable markets (Japan and South Korea) are projected to be at % and % respectively for the next 5-year period.
Global main Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors players cover Infineon, CREE (Wolfspeed), Roma Semiconductor Group, and STMicroelectronics, etc. In terms of revenue, the global largest two companies occupy a share nearly % in 2021.
This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market by product type, application, key players and key regions and countries.
Segmentation by type: breakdown data from 2017 to 2022 in Section 2.3; and forecast to 2028 in section 10.7.
Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor
Segmentation by application: breakdown data from 2017 to 2022, in Section 2.4; and forecast to 2028 in section 10.8.
Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other
This report also splits the market by region: Breakdown data in Chapter 4, 5, 6, 7 and 8.
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The report also presents the market competition landscape and a corresponding detailed analysis of the major players in the market. The key players covered in this report: Breakdown data in in Chapter 3.
Infineon
CREE (Wolfspeed)
Roma Semiconductor Group
STMicroelectronics
ON Semiconductor
Mitsubishi Electric
Fuji Electric
Littelfuse
Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd.
Shenzhen Basic Semiconductor Co., Ltd.