The insulated gate bipolar transistor (IGBT) and thyristor provide the advantage over metal-oxide-semiconductor field effect transistor (MOSFET) for minimum switching time and switching losses. In addition, it also provides the advantage over elevated breakdown voltage and less conduction losses of the bipolar junction transistor (BJT) in order to meet current power need. FACTS systems and HVDC use power electronic converters for power conversion and control power quality. Earlier, IGBTs and thyristors were used as key components in HVDC and FACTS converters for many years and now have been developed for higher power use. These devices also use high breakdown voltage and conduction losses in BJT to fulfill current power requirement.

Market Analysis and Insights: Global IGBT and Thyristor Market
The global IGBT and Thyristor market was valued at US$ XX in 2020 and will reach US$ XX million by the end of 2027, growing at a CAGR of XX% during 2022-2027.

Global IGBT and Thyristor Scope and Market Size
The global IGBT and Thyristor market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global IGBT and Thyristor market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by region (country), by Type and by Application for the period 2016-2027.

Segment by Type
High Power
Medium Power
Low Power

Segment by Application
Flexible AC Transmission System (FACTS)
HVDC

The IGBT and Thyristor market is analysed and market size information is provided by regions (countries). Segment by Application, the IGBT and Thyristor market is segmented into North America, Europe, China, Japan, Southeast Asia, India and Other Regions.

By Company
Fuji Electric
ABB
Infineon Technologies
ON Semiconductor
Hitachi
Mitsubishi Electric
Littelfuse (IXYS)
Toshiba
SEMIKRON
Danfoss
STARPOWER SEMICONDUCTOR